Knowledge of the refractive indices and absorption coefficients of semiconductors is
especially import in the design and analysis of optical and optoelectronic devices. The …

The results of first-principles theoretical study of the structural, electronic and optical
properties of zinc monochacogenides ZnS, ZnSe and ZnTe, have been performed using the …

The structural, optical spectroscopic ellipsometry and morphological properties of
nanocrystalline Hg 1-x Mn x O (0≤ x≤ 0.2) oxide diluted magnetic semiconductor thin films …

Zn 1− x Mn x Te and Zn 1− x Mg x Te ternary wide-gap semiconductor alloys were grown by
molecular beam epitaxy on (100) GaAs substrates over a wide range of compositions (0⩽ …

We present room-temperature pseudodielectric function spectra< ɛ>=< ɛ 1>+ i< ɛ 2> of In x
Ga 1− x As films grown on (100) InP by solid-source molecular-beam epitaxy. A wet …

Abstract Effects of do** of mercury atom (s) on optoelectronic properties of diatomic zinc
chalcogenides are investigated theoretically by designing zinc-mercury-chalcogenide …

Photoreflectance spectra have been measured to determine the E 1 and E 1+ 1 energies in
ZnTe at temperatures Tbetween 77 and 300 K using an Ar+-ion laser as a modulation light …

Using a rotating analyzer spectroscopic ellipsometer, we have investigated the complex
dielectric function of a series of ternary Be x Zn 1− x Te thin films in the energy range …

We report of parameters by which one can construct dielectric functions of Cd1− xMgxTe
alloy films for any composition x (0≤ x≦ 0.43) in the energy range 1.5–6.0 eV using the …

In this paper, the optical properties of ZnTe epitaxial thin films prepared by molecular beam
epitaxy (MBE) onto GaAs single crystal substrates are studied using the combined optical …