Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Investigation of solid/vapor interfaces using ambient pressure X-ray photoelectron spectroscopy

DE Starr, Z Liu, M Hävecker, A Knop-Gericke… - Chemical Society …, 2013 - pubs.rsc.org
Heterogeneous chemical reactions at vapor/solid interfaces play an important role in many
processes in the environment and technology. Ambient pressure X-ray photoelectron …

Transparent dynamic infrared emissivity regulators

Y Jia, D Liu, D Chen, Y **, C Chen, J Tao… - Nature …, 2023 - nature.com
Dynamic infrared emissivity regulators, which can efficiently modulate infrared radiation
beyond vision, have emerged as an attractive technology in the energy and information …

Binary Organic Solar Cells with> 19.6% Efficiency: The Significance of Self-Assembled Monolayer Modification

X Sun, X Ding, F Wang, J Lv, C Gao, G Zhang… - ACS Energy …, 2024 - ACS Publications
Improving the uniformity and density of self-assembled monolayers (SAMs) is crucial to
elevate the photovoltaic performance of organic solar cells (OSCs). Herein, we introduced …

Group‐III sesquioxides: growth, physical properties and devices

H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

Transparent conductive zinc oxide: basics and applications in thin film solar cells

K Ellmer, A Klein, B Rech - 2007 - books.google.com
Zinc oxide (ZnO) belongs to the class of transparent conducting oxides that can be used as
transparent electrodes in electronic devices or heated windows. In this book the material …

Transparent conducting oxides for photovoltaics: Manipulation of fermi level, work function and energy band alignment

A Klein, C Körber, A Wachau, F Säuberlich… - Materials, 2010 - mdpi.com
Do** limits, band gaps, work functions and energy band alignments of undoped and
donor-doped transparent conducting oxides ZnO, In 2 O 3, and SnO 2 as accessed by X-ray …

Nature of the Band Gap of Revealed by First-Principles Calculations <?format ?>and X-Ray Spectroscopy

A Walsh, JLF Da Silva, SH Wei, C Körber, A Klein… - Physical review …, 2008 - APS
Bulk and surface sensitive x-ray spectroscopic techniques are applied in tandem to show
that the valence band edge for In 2 O 3 is found significantly closer to the bottom of the …

Impacts of surface depletion on the plasmonic properties of doped semiconductor nanocrystals

O Zandi, A Agrawal, AB Shearer, LC Reimnitz… - Nature Materials, 2018 - nature.com
Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon
resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals …

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral

PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne… - Physical Review B …, 2009 - APS
The bulk and surface electronic structure of In 2 O 3 has proved controversial, prompting the
current combined experimental and theoretical investigation. The band gap of single …