Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …

In this paper, we present a brief history of silicon photonics from the early research papers in
the late 1980s and early 1990s, to the potentially revolutionary technology that exists today …

The IV–IV binary alloy, Si–Ge, has attracted incredible attention for its superior performances
in multiple disciplines, especially in high temperature thermoelectric and BICMOS …

Glass fibres with silicon cores have emerged as a versatile platform for all-optical
processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends …

High-carrier mobility semiconductors on insulators are essential for fabricating advanced
thin-film transistors, allowing for three-dimensional integrated circuits or high-performance …

In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated
photonic devices due to its fabrication flexibility and advantageous intrinsic properties that …

The molten core drawing method allows scalable fabrication of novel core fibres with
kilometre lengths. With metal and semiconducting components combined in a glass-clad …

Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-
insulator substrates are universally regarded as key enablers towards chip-scale …

The ever-increasing demand for integrated, low power interconnect systems is pushing the
bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz …

A recently introduced femtosecond laser printing technique was further developed for the
fabrication of crystalline single Ge and SiGe nanoparticles (NPs). Amorphous Ge and SiGe …