The ascending trend of Moore's law has stretched to the horizon, where the prospects of
carbon-based materials show the potential of replacing the silicon-based complementary …

In this paper, we have investigated the static metrics and switching attributes of graphene
nanoribbon field-effect transistors (GNR FETs) for scaling the channel length from 15 nm …

In this paper, some important circuit parameters of a monolayer armchair graphene
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …

This work has provided an efficient technique to improve the electrical performance for the
Graphene Nanoribbon Field Effect Transistors (GNRFETs) successfully. The physical gate …

A new double gate graphene nanoribbon field effect transistor with dual material for gate
namely DMG-GNRFET is proposed. DMG-GNRFET includes a gate which is divided to the …

In this paper, by using electrical junction in part of drain region which includes stepwise
do** distribution, a new structure is proposed for tunneling carbon nanotube field-effect …

In this paper, for the first time, we present a useful guideline with halo strategy for Graphene
Nanoribbon Field Effect Transistors (GNRFET) to obtain the best electrical performance. The …

In this paper a novel graphene nanoribbon transistor with electrically induced junction for
source and drain regions is proposed. An auxiliary junction is used to form electrically …

In this paper a double gate graphene nanoribbon field effect transistor with electrically-
activated source extension is proposed. Source region of the proposed structure includes …

Short channel effects of single‐gate and double‐gate graphene nanoribbon field effect
transistors (GNRFETs) are studied based on the atomistic pz orbital model for the …