Semiconductor nanowires: to grow or not to grow?
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
Preferential interface nucleation: an expansion of the VLS growth mechanism for nanowires
A review and expansion of the fundamental processes of the vapor–liquid–solid (VLS)
growth mechanism for nanowires is presented. Although the focus is on nanowires, most of …
growth mechanism for nanowires is presented. Although the focus is on nanowires, most of …
[ΒΙΒΛΙΟ][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
F Glas - Physical Review B—Condensed Matter and Materials …, 2006 - APS
We consider strained layers at the top of free-standing nanowires. We show that there exists
a radius-dependent critical layer thickness below which no interfacial dislocation should be …
a radius-dependent critical layer thickness below which no interfacial dislocation should be …
Catalytic growth of nanowires: vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth
KW Kolasinski - Current Opinion in Solid State and Materials Science, 2006 - Elsevier
Catalytic growth is a powerful tool to form a variety of wire (whisker) like structures with
diameters ranging from just a few nanometres to the millimetre range. A range of phases …
diameters ranging from just a few nanometres to the millimetre range. A range of phases …
Predictive modeling of self-catalyzed III-V nanowire growth
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy
We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires
directly on Si (111) substrates. The growth is catalyzed by liquid Ga droplets formed in the …
directly on Si (111) substrates. The growth is catalyzed by liquid Ga droplets formed in the …
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111)
GaN nanowires have been grown without external catalyst on Si (111) substrates by plasma-
assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 …
assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 …
Semiconductor nanowhiskers: synthesis, properties, and applications
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
We present a general model for the vapor-liquid-solid nanowire (NW) growth rates which
accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as …
accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as …