In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …

The temperature dependence of the optical‐absorption edge (Urbach edge) of GaAs is
measured in semi‐insulating and n‐type GaAs (n= 2× 1018 cm− 3) over the temperature …

Molecular beam epitaxy (MBE) is a highly precise and versatile crystal growth technique.
Since the first demonstration of quantum-well and superlattice structures in the early 1970's …

The recent developments in optical real time analysis of epitaxial growth are reviewed.
Emphasis is placed on reflectance anisotropy spectroscopy (RAS) and spectroscopic …

An in-situ electron diffraction study of surface reconstructions on (001) oriented GaAs1− xBix
films has been carried out during growth by molecular beam epitaxy on GaAs substrates in …

An optical method and apparatus for measuring the temperature of a substrate material with
a temperature dependent bandgap. The substrate is illuminated with a broad spectrum lamp …

Temperature is an important parameter in modern industrial processes, scientific research,
and daily life. Surface temperature measurement is essential to the field of heat transfer …

The complex dielectric constants of GaA s 1-x B ix alloys grown by molecular beam epitaxy
with x= 0% to 17% have been measured over the spectral range from 0.37 to 9.1 eV using …

The effect of growth conditions on the electronic properties of GaAs 1− x Bi x grown on GaAs
by molecular beam epitaxy has been investigated by means of temperature dependent …

Using atomic force microscopy and in situ elastic light scattering we show that the surface of
molecular beam epitaxy (MBE) grown GaAs tends towards an equilibrium roughness …