GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a
promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green …

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …

Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in
solid-state lighting. Great effort has been made, but only slight advancements have occurred …

InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …

The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED
structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec …

Nowadays, the demand for high-speed information transmission is increasing rapidly.
Visible light communication (VLC) based on light-emitting diodes (LEDs) is supposed as a …

Although the 5G wireless network has made significant advances, it is not enough to
accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras …

We study the desorption of In in InGaN nanowire (NW) growth on Si, generating a unique
light emitter. With increasing growth temperature above the onset of In desorption, uniform …