This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

Using nonlocal empirical pseudopotentials, we compute the band structure and shear
deformation potentials of strained Si, Ge, and SiGe alloys. Fitting the theoretical results to …

Applying stress/strain on a material provides a mechanism to tune the thermal conductivity of
materials dynamically or on demand. Experimental and simulation results have shown that …

A method of controlling threading dislocation densities in Ge on Si involving graded SiGe
layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us …

The utility of Raman spectroscopy for the simultaneous determination of composition and
strain in thin Ge x Si1− x layers has been investigated. Using data from the literature and …

Since the first edition of this book, a lot of interesting integrated optoelectronic devices were
investigated and introduced in numerous publications. Therefore, Springer and me decided …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

Compositionally graded films of SiGe/Si (100) and GaInAs/GaAs were grown under different
conditions in order to investigate the different modes of strain relaxation associated with the …