Metal oxide semiconductor thin-film transistors for flexible electronics

L Petti, N Münzenrieder, C Vogt, H Faber… - Applied Physics …, 2016 - pubs.aip.org
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

Buried interface dielectric layer engineering for highly efficient and stable inverted perovskite solar cells and modules

H Li, G **e, X Wang, S Li, D Lin, J Fang… - Advanced …, 2023 - Wiley Online Library
Stability and scalability are essential and urgent requirements for the commercialization of
perovskite solar cells (PSCs), which are retarded by the non‐ideal interface leading to non …

A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

S Hong, JW Park, HJ Kim, Y Kim… - Journal of Information …, 2016 - Taylor & Francis
In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed
amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to …

Dual detection of mercury (II) and lead (II) ions using a facile coumarin-based fluorescent probe via excited state intramolecular proton transfer and photo-induced …

S Muthusamy, K Rajalakshmi, D Zhu, W Zhu… - Sensors and Actuators B …, 2021 - Elsevier
A Schiff base fluorophore coumarin incorporated 4-(diethylamino) salicylaldehyde (Cou-S)
is designed and synthesized to allow an excited state intramolecular proton transfer and …

Degussa P25 TiO2 modified with H2O2 under microwave treatment to enhance photocatalytic properties

E Han, K Vijayarangamuthu, J Youn, YK Park, SC Jung… - Catalysis Today, 2018 - Elsevier
We report a facile and effective low-temperature modification method for improving the
photocatalytic activity of commercial Degussa P25 TiO 2. The method involves the …

Hybrid organic–metal oxide multilayer channel transistors with high operational stability

YH Lin, W Li, H Faber, A Seitkhan, NA Hastas… - Nature …, 2019 - nature.com
Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic
light-emitting diode displays. Commercial devices currently rely on metal oxides processed …

Redox chloride elimination reaction: facile solution route for indium‐free, low‐voltage, and high‐performance transistors

A Liu, Z Guo, G Liu, C Zhu, H Zhu… - Advanced Electronic …, 2017 - Wiley Online Library
Solution‐processed oxide semiconductor and dielectric thin films have been widely studied
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …

Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors

XL Wang, HL Zhao, G Tarsoly, H Zhu, JY Lee… - Applied Surface …, 2024 - Elsevier
In 2 O 3 is a transparent semiconductor layer due to its transparency, high mobility, and
solution processability. In this paper, we study the effect of focused oxygen plasma treatment …

Flame-made Zn-substituted SnO2 nanoparticulate compound for ultra-sensitive formic acid gas sensing

N Tammanoon, A Wisitsoraat, A Tuantranont… - Journal of Alloys and …, 2021 - Elsevier
This research conducts a detailed study on the sensitivity and selectivity of Zn-substituted
SnO 2 nanoparticles towards formic acid (HCOOH), an important volatile organic acid (VOA) …

Artificially fabricated subgap states for visible-light absorption in indium–gallium–zinc oxide phototransistor with solution-processed oxide absorption layer

J Chung, YJ Tak, WG Kim, BH Kang… - ACS applied materials & …, 2019 - ACS Publications
We present a solution-processed oxide absorption layer (SAL) for detecting visible light of
long wavelengths (635 and 532 nm) for indium–gallium–zinc oxide (IGZO) phototransistors …