Metal oxide semiconductor thin-film transistors for flexible electronics
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …
novel applications, such as wearable and textile integrated devices, seamless and …
Buried interface dielectric layer engineering for highly efficient and stable inverted perovskite solar cells and modules
H Li, G **e, X Wang, S Li, D Lin, J Fang… - Advanced …, 2023 - Wiley Online Library
Stability and scalability are essential and urgent requirements for the commercialization of
perovskite solar cells (PSCs), which are retarded by the non‐ideal interface leading to non …
perovskite solar cells (PSCs), which are retarded by the non‐ideal interface leading to non …
A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors
S Hong, JW Park, HJ Kim, Y Kim… - Journal of Information …, 2016 - Taylor & Francis
In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed
amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to …
amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to …
Dual detection of mercury (II) and lead (II) ions using a facile coumarin-based fluorescent probe via excited state intramolecular proton transfer and photo-induced …
S Muthusamy, K Rajalakshmi, D Zhu, W Zhu… - Sensors and Actuators B …, 2021 - Elsevier
A Schiff base fluorophore coumarin incorporated 4-(diethylamino) salicylaldehyde (Cou-S)
is designed and synthesized to allow an excited state intramolecular proton transfer and …
is designed and synthesized to allow an excited state intramolecular proton transfer and …
Degussa P25 TiO2 modified with H2O2 under microwave treatment to enhance photocatalytic properties
We report a facile and effective low-temperature modification method for improving the
photocatalytic activity of commercial Degussa P25 TiO 2. The method involves the …
photocatalytic activity of commercial Degussa P25 TiO 2. The method involves the …
Hybrid organic–metal oxide multilayer channel transistors with high operational stability
Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic
light-emitting diode displays. Commercial devices currently rely on metal oxides processed …
light-emitting diode displays. Commercial devices currently rely on metal oxides processed …
Redox chloride elimination reaction: facile solution route for indium‐free, low‐voltage, and high‐performance transistors
Solution‐processed oxide semiconductor and dielectric thin films have been widely studied
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …
Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors
XL Wang, HL Zhao, G Tarsoly, H Zhu, JY Lee… - Applied Surface …, 2024 - Elsevier
In 2 O 3 is a transparent semiconductor layer due to its transparency, high mobility, and
solution processability. In this paper, we study the effect of focused oxygen plasma treatment …
solution processability. In this paper, we study the effect of focused oxygen plasma treatment …
Flame-made Zn-substituted SnO2 nanoparticulate compound for ultra-sensitive formic acid gas sensing
N Tammanoon, A Wisitsoraat, A Tuantranont… - Journal of Alloys and …, 2021 - Elsevier
This research conducts a detailed study on the sensitivity and selectivity of Zn-substituted
SnO 2 nanoparticles towards formic acid (HCOOH), an important volatile organic acid (VOA) …
SnO 2 nanoparticles towards formic acid (HCOOH), an important volatile organic acid (VOA) …
Artificially fabricated subgap states for visible-light absorption in indium–gallium–zinc oxide phototransistor with solution-processed oxide absorption layer
We present a solution-processed oxide absorption layer (SAL) for detecting visible light of
long wavelengths (635 and 532 nm) for indium–gallium–zinc oxide (IGZO) phototransistors …
long wavelengths (635 and 532 nm) for indium–gallium–zinc oxide (IGZO) phototransistors …