The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties
SiO 2 is the most widely used dielectric material but its growth or deposition involves high
thermal budgets or suffers from shadowing effects. The low-temperature method presented …
thermal budgets or suffers from shadowing effects. The low-temperature method presented …
Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy
The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency
capacitance–voltage (C–V) and current–voltage characterization of top-gated MoS2 metal …
capacitance–voltage (C–V) and current–voltage characterization of top-gated MoS2 metal …
Continuous distribution of interface states in n-type double-side poly-Si/SiOx passivating contact solar cells
Advanced passivation contact in high-efficiency silicon solar cells plays an important role for
the sake of minimizing recombination losses. A stack of heavily doped polycrystalline silicon …
the sake of minimizing recombination losses. A stack of heavily doped polycrystalline silicon …
Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
High dielectric constant hafnium oxide films were formed by electron beam (e-beam)
evaporation on HF last terminated silicon (100) wafers. We report on the influence of low …
evaporation on HF last terminated silicon (100) wafers. We report on the influence of low …
PECVD-AlOx/SiNx passivation stacks on silicon: Effective charge dynamics and interface defect state spectroscopy
The charge dynamics and the interface defect state density of AlO x/SiN x passivation stacks
deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon (c …
deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon (c …
[HTML][HTML] Preparation and characterization of silica and clay-silica core-shell nanoparticles using sol-gel method
Silica and montmorillonite-supported silica nanoparticles were prepared via an acid one
step sol-gel process. The synthesized solids were characterized using XRD, FTIR, TEM and …
step sol-gel process. The synthesized solids were characterized using XRD, FTIR, TEM and …
Impact of H2/N2 annealing on interface defect densities in Si (100)/SiO2/HfO2/TiN gate stacks
This paper reports on the influence of forming gas annealing (5% H2/95% N2) over the
temperature range 350° C-550° C on the density of electrically active interface states in Si …
temperature range 350° C-550° C on the density of electrically active interface states in Si …
Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon
In this work, we present experimental results examining the energy distribution of the
relatively high electrically active interface defects which are commonly observed in high …
relatively high electrically active interface defects which are commonly observed in high …
Trap-dominated nitrogen dioxide and ammonia responses of air-stable p-channel conjugated polymers from detailed bias stress analysis
The improvement of conjugated polymer-based gas sensors involves fine tuning the
backbone electronic structure and solid-state microstructure to combine high stability and …
backbone electronic structure and solid-state microstructure to combine high stability and …