Overcoming size effects in ferroelectric thin films
Ferroelectric thin films have recently received unprecedented attention due to the need to
miniaturize electronic circuit devices. Synthesis and deposition processes along with …
miniaturize electronic circuit devices. Synthesis and deposition processes along with …
Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy
K Bao, J Liao, F Yan, S Jia, B Zeng… - ACS Applied …, 2023 - ACS Publications
HfO2-based ferroelectric thin films are promising in both memory and logic devices owing to
their compatibility with complementary metal-oxide-semiconductor platforms and excellent …
their compatibility with complementary metal-oxide-semiconductor platforms and excellent …
Structure, Oxygen Content and Electric Properties of Titanium Nitride Electrodes in TiNx/La:HfO2/TiNx Stacks Grown by PEALD on SiO2/Si
EI Suvorova, OV Uvarov, KV Chizh, AA Klimenko… - Nanomaterials, 2022 - mdpi.com
This work reports experimental results of the quantitative determination of oxygen and band
gap measurement in the TiNx electrodes in planar TiNx top/La: HfO2/TiNx bottom MIM …
gap measurement in the TiNx electrodes in planar TiNx top/La: HfO2/TiNx bottom MIM …
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel
Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–
zinc oxide (-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited …
zinc oxide (-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited …
[HTML][HTML] Conductive filament formation in the failure of Hf0. 5Zr0. 5O2 ferroelectric capacitors
Ferroelectric materials provide pathways to higher performance logic and memory
technologies, with Hf 0.5 Zr 0.5 O 2 being the most popular among them. However, critical …
technologies, with Hf 0.5 Zr 0.5 O 2 being the most popular among them. However, critical …
Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0. 5Zr0. 5O2
E Korostylev, V Mikheev, AG Chernikova… - Journal of Applied …, 2023 - pubs.aip.org
Because of their full compatibility with CMOS technology, HfO2-based ferroelectrics, and
especially Hf0. 5Zr0. 5O2 (HZO), attract a lot of attention. However, the overwhelming …
especially Hf0. 5Zr0. 5O2 (HZO), attract a lot of attention. However, the overwhelming …
Chemical and electronic properties of interfaces between RuO2 and Hf0. 5Zr0. 5O2 studied by x-ray photoelectron spectroscopy
AG Chernikova, YY Lebedinskii, RR Khakimov… - Applied Physics …, 2023 - pubs.aip.org
Recently, the extensive study of the platinum group metal oxide electrodes for TiN
replacement in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric memory stacks began. In this …
replacement in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric memory stacks began. In this …
Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom …
The ferroelectric properties of Hf0. 5Zr0. 5O2 (HZO) according to the preferred orientations of
the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200) …
the titanium nitride (TiN) bottom electrode (BE) were investigated. The (111) and (200) …
Combined effects of the deposition temperature and metal electrodes on ferroelectric properties of atomic-layer-deposited Hf0. 5Zr0. 5O2 films
D Eom, J Lee, W Lee, J Oh, C Park, J Kim… - Journal of Physics D …, 2023 - iopscience.iop.org
The combined effects of the atomic-layer-deposition (ALD) temperature (220 C–280 C) and
metal electrodes (TiN and Mo) on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 films were …
metal electrodes (TiN and Mo) on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 films were …
Wake-up free La-doped ZrO2 antiferroelectric capacitors
J Li, J Zhou, F Wu, Z Weng, Y Huo… - Japanese Journal of …, 2024 - iopscience.iop.org
This study experimentally investigated La-doped ZrO 2 (ZLO) antiferroelectric (AFE)
capacitors. Significant polarization enhancement is demonstrated in ZLO antiferroelectric …
capacitors. Significant polarization enhancement is demonstrated in ZLO antiferroelectric …