Recently, very thin AlAs cap** layers (CLs) have been proposed as a useful tool to
increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure …

In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …

Zero-dimensional (0D) tin halide perovskites feature extraordinary properties, such as
broadband emission, high photoluminescence quantum yield, and self-absorption-free …

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …

Multi-junction solar cells made by assembling semiconductor materials with different
bandgap energies have hold the record conversion efficiencies for many years and are …

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the
wave functions. We have studied theoretically the fine structure splitting in InAs quantum …

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001)
substrates is studied by means of excitation and temperature-dependent …

We study the polarization response of the emission from type-II GaAsSb capped InAs
quantum dots. The theoretical prediction based on the calculations of the overlap integrals of …

Abstract InAs/GaAs QDs are being investigated in the field of solar cells (SCs) with the aim of
achieving high SC performances. In order to control the band offsets and the accumulated …

This work reports on the benefits from using thin GaAsSb cap** layers (CLs) on InAs/GaAs
quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD …