A review of tunnel field-effect transistors for improved ON-state behaviour
Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …
possibly replace the traditional MOSFET from current IC technology. It has gained much …
Extended-source double-gate tunnel FET with improved DC and analog/RF performance
In this article, we propose an extended-source double-gate tunnel field-effect transistor
(ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET …
(ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET …
Investigating the effects of do** gradient, trap charges, and temperature on Ge vertical TFET for low power switching and analog applications
Influence of Gaussian do** in transistor regions, do** gradient step size (σ), interface
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …
RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness
Abstract A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET)
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET
R Saha - Microelectronics Journal, 2021 - Elsevier
In this paper, the impact of ferroelectric layer thickness (t FE) on input drain current
characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator …
characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator …
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor
In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
Impact of temperature on the reliability of UTB-DG-FE-TFETs and their RF/analog and linearity parameter dependence
This study aimed to investigate the influence of temperature on the reliability of an ultrathin-
body double-gate ferroelectric tunnel field-effect transistor (UTB-DG-FE-TFET). An in-depth …
body double-gate ferroelectric tunnel field-effect transistor (UTB-DG-FE-TFET). An in-depth …
Effect of carrier transport process on tunneling electroresistance in ferroelectric tunnel junction
We demonstrate the factors that determine the tunneling electroresistance (TER) of the
ferroelectric tunnel junction (FTJ) by investigating the effects of temperature () and the …
ferroelectric tunnel junction (FTJ) by investigating the effects of temperature () and the …
Performance assessment of dielectrically modulated negative capacitance germanium source vertical tunnel FET biosensor for detection of breast cancer cell lines
The paper presents a dielectrically modulated negative capacitance Germanium source
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …
Performance investigation and impact of trap charges on novel lateral dual gate oxide-bilateral tunnelling based field effect transistor
Tunnel field effect transistors (TFETs) offer advantage of robustness against short channel
effects. However, reliability issues caused by interface trap charges (ITCs) generated during …
effects. However, reliability issues caused by interface trap charges (ITCs) generated during …