Carrier transport across polar n-type InGaN/GaN multiple quantum wells (MQWs) has been
studied by time-resolved photoluminescence (PL) using an optical marker technique …

The Hall effect is theoretically studied in a rectangular quantum well (RQW) with infinite
barriers subjected to a crossed dc electric field and magnetic field (the magnetic field is …

High-electron-mobility transistors (HEMTs) based on 2-D electron gases (2DEGs) in III-V
heterostructures have superior mobility compared with the transistors of silicon-based …

The electron relaxation mechanism of the electrons in the pseudo triangle quantum well
located in the Al 0.3 Ga 0.7 N/GaN heterostructure interface grown by the Molecular Beam …

The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of
wurtzite Al x Ga 1-x N has been investigated by introducing impurity modes in a modified …

Magnetoresistance oscillations in semiconductor quantum wells, with the semi-parabolic
plus semi-inverse squared potential, under the influence of intense electromagnetic waves …

We report on the power loss mechanisms of hot electrons in as-grown and annealed n-type
modulation-doped Al 0.15 Ga 0.85 As/GaAs 1-x Bi x (x= 0 and 0.04) quantum well structures …

The dependence of the Hall coefficient on do** concentration in doped semiconductor
superlattices (DSSLs) under a crossed dc electric field and magnetic field in the presence of …