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Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Radiation damage in wide and ultra-wide bandgap semiconductors
SJ Pearton, A Aitkaliyeva, M ** effects on single-event transients in GaN HEMTs
The effect of various trap** centers on single-event transients (SETs) in GaN high-electron-
mobility transistors (HEMTs) is examined via calibrated technology computer-aided design …
mobility transistors (HEMTs) is examined via calibrated technology computer-aided design …
[HTML][HTML] Thermo-mechanical aspects of gamma irradiation effects on GaN HEMTs
We report thermal and mechanical responses accompanying electrical characteristics of
depletion mode GaN high electron mobility transistors exposed to gamma radiation up to 10 …
depletion mode GaN high electron mobility transistors exposed to gamma radiation up to 10 …
[HTML][HTML] Displacement damage and single event effects of SiC diodes and MOSFETs by neutron, heavy ions and pulsed laser
SP Shangguan, JW Han, YQ Ma, YH Wang… - Microelectronics …, 2022 - Elsevier
SiC diodes and MOSFETs (device under test, DUTs) have been tested by neutron and
heavy ions, pulsed laser separately or both. Neutron displacement damage (DD) results …
heavy ions, pulsed laser separately or both. Neutron displacement damage (DD) results …
The effect of the gate-connected field plate on single-event transients in AlGaN/GaN Schottky-gate HEMTs
A focused pulsed X-ray beam is used to determine how the redistribution of the electric field
by the gate-connected field plate affects single-event transient (SET) susceptibility of an …
by the gate-connected field plate affects single-event transient (SET) susceptibility of an …