As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable
candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology …

We present in this paper design considerations and implementation challenges of a
proposed versatile SoC/SiP sensor interface intended for industrial applications. The …

This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at
elevated temperatures. Modifications to the standard ASM-HEMT were developed to …

This paper presents a fully integrated data transmission system utilizing gallium nitride
(GaN) high-electron-mobility transistors (HEMTs). The system is specifically designed for …

Mechanical stress wave characteristic parameters are important for analyzing the health of
power devices and are the basis of power cycling experiments to establish the connection …

The circuit design method has been developed for halving the static current consumption of
differential stages on field-effect transistors in transimpedance and operational amplifiers …

Thermal models of high-temperature integrated circuits (ICs) on wide-gap semiconductors
(silicon-carbide and gallium-nitride) are considered. The “chip-to-environment” thermal …

The problems of design and technological solutions for high-temperature analog
microcircuits have been studied. Based on a review of publications devoted to the problems …

Высокотемпературные интегральные микросхемы (ИМС), сохраняющие
работоспособность при температуре более 150 С, требуются во многих областях …

Исследованы проблемы конструктивно-технологических решений
высокотемпературных аналоговых микросхем. На основании обзора публикаций …