Two-dimensional devices and integration towards the silicon lines

S Wang, X Liu, M Xu, L Liu, D Yang, P Zhou - Nature materials, 2022 - nature.com
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Wurtzite and fluorite ferroelectric materials for electronic memory

KH Kim, I Karpov, RH Olsson III, D Jariwala - Nature Nanotechnology, 2023 - nature.com
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

An organic electrochemical transistor for multi-modal sensing, memory and processing

S Wang, X Chen, C Zhao, Y Kong, B Lin, Y Wu, Z Bi… - Nature …, 2023 - nature.com
By integrating sensing, memory and processing functionalities, biological nervous systems
are energy and area efficient. Emulating such capabilities in artificial systems is, however …

Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics

T Wang, J Meng, X Zhou, Y Liu, Z He, Q Han… - Nature …, 2022 - nature.com
Neuromorphic computing memristors are attractive to construct low-power-consumption
electronic textiles due to the intrinsic interwoven architecture and promising applications in …

Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

G Wu, X Zhang, G Feng, J Wang, K Zhou, J Zeng… - Nature Materials, 2023 - nature.com
Recently, the increasing demand for data-centric applications is driving the elimination of
image sensing, memory and computing unit interface, thus promising for latency-and energy …

Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction

W Han, X Zheng, K Yang, CS Tsang, F Zheng… - Nature …, 2023 - nature.com
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are
intriguing for next-generation in-memory computing. To date, several 2D ferroelectric …

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

H Ning, Z Yu, Q Zhang, H Wen, B Gao, Y Mao… - Nature …, 2023 - nature.com
The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …

Synthesis, modulation, and application of two-dimensional TMD heterostructures

R Wu, H Zhang, H Ma, B Zhao, W Li, Y Chen… - Chemical …, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi… - Nature …, 2023 - nature.com
The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …