Sub-10 nm fabrication: methods and applications
Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance
for advancing nanoscience and nanotechnology. While the capability of current …
for advancing nanoscience and nanotechnology. While the capability of current …
Quantum engineering of transistors based on 2D materials heterostructures
Quantum engineering entails atom-by-atom design and fabrication of electronic devices.
This innovative technology that unifies materials science and device engineering has been …
This innovative technology that unifies materials science and device engineering has been …
Bts: An accelerator for bootstrappable fully homomorphic encryption
Homomorphic encryption (HE) enables the secure offloading of computations to the cloud by
providing computation on encrypted data (ciphertexts). HE is based on noisy encryption …
providing computation on encrypted data (ciphertexts). HE is based on noisy encryption …
SHARP: A short-word hierarchical accelerator for robust and practical fully homomorphic encryption
Fully homomorphic encryption (FHE) is an emerging cryptographic technology that
guarantees the privacy of sensitive user data by enabling direct computations on encrypted …
guarantees the privacy of sensitive user data by enabling direct computations on encrypted …
Ark: Fully homomorphic encryption accelerator with runtime data generation and inter-operation key reuse
Homomorphic Encryption (HE) is one of the most promising post-quantum cryptographic
schemes that enable privacy-preserving computation on servers. However, noise …
schemes that enable privacy-preserving computation on servers. However, noise …
Scaling trends of digital single-event effects: A survey of SEU and SET parameters and comparison with transistor performance
D Kobayashi - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
The history of integrated circuit (IC) development is another record of human challenges
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …
A 23.6-Mb/mm SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications
Z Guo, D Kim, S Nalam, J Wiedemer… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
A 23.6-Mb/mm 2 and a 20.4-Mb/mm 2 SRAM arrays are manufactured in a 10-nm FinFET
CMOS technology, utilizing high-density 0.0312 μm 2 and low-voltage 0.0367 μm 2 6T …
CMOS technology, utilizing high-density 0.0312 μm 2 and low-voltage 0.0367 μm 2 6T …
REED: Chiplet-based accelerator for fully homomorphic encryption
Fully Homomorphic Encryption (FHE) enables privacy-preserving computation and has
many applications. However, its practical implementation faces massive computation and …
many applications. However, its practical implementation faces massive computation and …
Physics-based device-circuit cooptimization scheme for 7-nm technology node SRAM design and beyond
Q Huo, Z Wu, X Wang, W Huang, J Yao… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article presents a comprehensive assessment on the 6T static random access memory
(SRAM) cell with 7-nm FinFET technology by implementing quantum physics-based device …
(SRAM) cell with 7-nm FinFET technology by implementing quantum physics-based device …
Bonncell: Automatic cell layout in the 7-nm era
Multipatterning technology used in 7-nm technology and beyond imposes more and more
complex design rules on the layout of cells. The often nonlocal nature of these new design …
complex design rules on the layout of cells. The often nonlocal nature of these new design …