Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor
nanostructures–including defects. The versatile combination of time, spatial, and spectral …
nanostructures–including defects. The versatile combination of time, spatial, and spectral …
Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
A Dussaigne, F Barbier, B Samuel, A Even… - Journal of Crystal …, 2020 - Elsevier
The InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance
the In incorporation rate in In y Ga 1-y N/In x Ga 1-x N multiple quantum wells (MQWs) to get …
the In incorporation rate in In y Ga 1-y N/In x Ga 1-x N multiple quantum wells (MQWs) to get …
Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition
InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal
organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 …
organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 …
Correlation between growth interruption and indium segregation in InGaN MQWs
InGaN/GaN multiple quantum wells (MQWs) with the same indium content and QW widths
were grown by metalorganic chemical vapor deposition using metal precursor flow …
were grown by metalorganic chemical vapor deposition using metal precursor flow …
Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations
V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-
ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and …
ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and …
Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval
F Liang, D Zhao, Z Liu, P Chen, J Yang - Surfaces and Interfaces, 2022 - Elsevier
An epitaxial method of stepped growth with additional annealing interval is proposed to
suppress the V-pit formation in InGaN layer. Detailed investigation on the influences of …
suppress the V-pit formation in InGaN layer. Detailed investigation on the influences of …
Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content
H Wang, Q Tan, X He - JETP Letters, 2020 - Springer
In the growth of InGaN/GaN multiple quantum well (MQW) by metal organic chemical vapor
deposition (MOCVD), V-defects have been observed and investigated. From cross-sectional …
deposition (MOCVD), V-defects have been observed and investigated. From cross-sectional …
Cathodoluminescence Spectroscopy in Graded InxGa1−xN
X Zhao, T Wang, B Sheng, X Zheng, L Chen, H Liu… - Nanomaterials, 2022 - mdpi.com
InGaN materials are widely used in optoelectronic devices due to their excellent optical
properties. Since the emission wavelength of the full-composition-graded InxGa1− xN films …
properties. Since the emission wavelength of the full-composition-graded InxGa1− xN films …
Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1− xN/GaN Multiple Quantum Wells
C Cheng-Chang, L Hsiang-Ting… - Nanoscale …, 2021 - search.proquest.com
In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold
symmetric GaN photonic quasicrystal nanorod device which was fabricated using the …
symmetric GaN photonic quasicrystal nanorod device which was fabricated using the …
Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate
GQ **e, G **, HY Wang - Crystallography Reports, 2023 - Springer
Patterned sapphire substrate technology can improve the growth performance and luminous
efficiency of light-emitting diodes. In this work, dry etching by inductively coupled plasma is …
efficiency of light-emitting diodes. In this work, dry etching by inductively coupled plasma is …