[HTML][HTML] Terahertz metadevices for silicon plasmonics

Y Liang, H Yu, H Wang, HC Zhang, TJ Cui - Chip, 2022 - Elsevier
Metamaterial devices (metadevices) have been developed in progress aiming to generate
extraordinary performance over traditional devices in the (sub-) terahertz (THz) domain, and …

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Y Shan, Y Liang, C Li, W Sun… - International Journal of …, 2024 - Wiley Online Library
The research and development on solid‐state source generators have been making
progress on chip, aiming to generate low noise, high output power, and high DC‐to‐RF …

An energy-efficient and low-crosstalk sub-THz I/O by surface plasmonic polariton interconnect in CMOS

Y Liang, H Yu, G Feng, AAA Apriyana… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Traditional TEM-based I/O communication through either PCB traces or free space has
significant path loss and electromagnetic (EM) interferences that are hardly employed …

120-GHz wideband I/Q receiver based on baseband equalizing technique

TH Jang, DM Kang, SH Kim, CJ Lee… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
In this study, we examined a 120-GHz wideband I/Q receiver based on a baseband
equalizing amplifier using 40-nm complementary metal oxide semiconductor (CMOS) …

Design and Analysis of -Band On-Chip Modulator and Signal Source Based on Split-Ring Resonator

Y Liang, CC Boon, C Li, XL Tang, HJ Ng… - … Transactions on Very …, 2019 - ieeexplore.ieee.org
In an effort toward high-speed and low-power I/O data link in the future exascale data server,
this paper presents a signal source and a modulator in the D-band. The split-ring resonator …

A 165-GHz transmitter with 10.6% peak DC-to-RF efficiency and 0.68-pJ/b energy efficiency in 65-nm bulk CMOS

Y Ye, B Yu, QJ Gu - IEEE Transactions on Microwave Theory …, 2016 - ieeexplore.ieee.org
This paper presents a high-efficiency 165-GHz ON-OFF keying transmitter in a 65-nm CMOS
technology with the record efficiency to the best of our knowledge. This is due to the …

A 311.6 GHz Phase-locked Loop in 0.13 µm SiGe BiCMOS Process with− 90 dBc/Hz in-band Phase Noise

Y Liang, CC Boon, Y Dong, Q Chen… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
Using a quadrature XOR-gate (QXOR) reduces the second order harmonic term at the
output, making it suitable to be used as a phase/frequency detector in high-frequency phase …

A+ 3.0-dBm 115–129-GHz CMOS power-efficient injection-locked frequency tripler chain

DM Kang, HS Lee, SH Kim, TH Jang… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
A CMOS power-efficient injection-locked (IL) frequency multiplier chain is presented in this
letter. An input IL oscillator buffer, frequency tripler, and IL oscillator buffer were cascaded …

A crosstalk-immune sub-THz all-surface-wave I/O transceiver in 65-nm CMOS

Y Liang, CC Boon, H Yu - 2018 IEEE Radio Frequency …, 2018 - ieeexplore.ieee.org
A surface-wave I/O transceiver is proposed and validated at 140 GHz in 65 nm CMOS. By
generating, modulating and propagating surface plasmonic signal, the all-surface-wave I/O …

Multi-channel FSK inter/intra-chip communication by exploiting field-confined slow-wave transmission line

Q Chen, CC Boon, X Zhang, C Li… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Using on-chip slow-wave transmission line (SW-TL) has paved a new way towards
millimeter-wave (mm-wave) to terahertz (THz) low power and high speed inter-/intra-chip …