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[HTML][HTML] Terahertz metadevices for silicon plasmonics
Metamaterial devices (metadevices) have been developed in progress aiming to generate
extraordinary performance over traditional devices in the (sub-) terahertz (THz) domain, and …
extraordinary performance over traditional devices in the (sub-) terahertz (THz) domain, and …
Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources
The research and development on solid‐state source generators have been making
progress on chip, aiming to generate low noise, high output power, and high DC‐to‐RF …
progress on chip, aiming to generate low noise, high output power, and high DC‐to‐RF …
An energy-efficient and low-crosstalk sub-THz I/O by surface plasmonic polariton interconnect in CMOS
Traditional TEM-based I/O communication through either PCB traces or free space has
significant path loss and electromagnetic (EM) interferences that are hardly employed …
significant path loss and electromagnetic (EM) interferences that are hardly employed …
120-GHz wideband I/Q receiver based on baseband equalizing technique
In this study, we examined a 120-GHz wideband I/Q receiver based on a baseband
equalizing amplifier using 40-nm complementary metal oxide semiconductor (CMOS) …
equalizing amplifier using 40-nm complementary metal oxide semiconductor (CMOS) …
Design and Analysis of -Band On-Chip Modulator and Signal Source Based on Split-Ring Resonator
In an effort toward high-speed and low-power I/O data link in the future exascale data server,
this paper presents a signal source and a modulator in the D-band. The split-ring resonator …
this paper presents a signal source and a modulator in the D-band. The split-ring resonator …
A 165-GHz transmitter with 10.6% peak DC-to-RF efficiency and 0.68-pJ/b energy efficiency in 65-nm bulk CMOS
This paper presents a high-efficiency 165-GHz ON-OFF keying transmitter in a 65-nm CMOS
technology with the record efficiency to the best of our knowledge. This is due to the …
technology with the record efficiency to the best of our knowledge. This is due to the …
A 311.6 GHz Phase-locked Loop in 0.13 µm SiGe BiCMOS Process with− 90 dBc/Hz in-band Phase Noise
Using a quadrature XOR-gate (QXOR) reduces the second order harmonic term at the
output, making it suitable to be used as a phase/frequency detector in high-frequency phase …
output, making it suitable to be used as a phase/frequency detector in high-frequency phase …
A+ 3.0-dBm 115–129-GHz CMOS power-efficient injection-locked frequency tripler chain
A CMOS power-efficient injection-locked (IL) frequency multiplier chain is presented in this
letter. An input IL oscillator buffer, frequency tripler, and IL oscillator buffer were cascaded …
letter. An input IL oscillator buffer, frequency tripler, and IL oscillator buffer were cascaded …
A crosstalk-immune sub-THz all-surface-wave I/O transceiver in 65-nm CMOS
A surface-wave I/O transceiver is proposed and validated at 140 GHz in 65 nm CMOS. By
generating, modulating and propagating surface plasmonic signal, the all-surface-wave I/O …
generating, modulating and propagating surface plasmonic signal, the all-surface-wave I/O …
Multi-channel FSK inter/intra-chip communication by exploiting field-confined slow-wave transmission line
Using on-chip slow-wave transmission line (SW-TL) has paved a new way towards
millimeter-wave (mm-wave) to terahertz (THz) low power and high speed inter-/intra-chip …
millimeter-wave (mm-wave) to terahertz (THz) low power and high speed inter-/intra-chip …