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Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi2Se3 trilayers by Pt interfacial engineering
Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate
for magnetoresistive random-access memory (MRAM) technology. However, the realization …
for magnetoresistive random-access memory (MRAM) technology. However, the realization …
Field-free switching in symmetry-breaking multilayers: the critical role of interlayer chiral exchange
It is crucial to realize field-free deterministic current-induced switching in spin-orbit-torque
magnetic random-access memory with perpendicular magnetic anisotropy (PMA). A …
magnetic random-access memory with perpendicular magnetic anisotropy (PMA). A …
Quantum kinetic theory of quadratic responses
Recent studies have revealed a general procedure for incorporating disorder into the
semiclassical model of carrier transport, whereby the predictions of quantum linear response …
semiclassical model of carrier transport, whereby the predictions of quantum linear response …
[HTML][HTML] Evidences of thermoelectrically driven unidirectional magnetoresistance from a single Weyl ferromagnet Co2MnGa
Weyl ferromagnets, with large anomalous Hall (and Nernst) effects, are an ideal playground
to study unconventional transport phenomena. Here, we report a sizable unidirectional …
to study unconventional transport phenomena. Here, we report a sizable unidirectional …
Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers
Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with
ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic …
ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic …
Large unidirectional magnetoresistance from the dual functionality of copper oxide in naturally oxidized light-metal Al/Cu bilayer films
L Zhao, Y Li, F Liu, T Li, Y Wang, X Liu, D Yang… - Physical Review …, 2024 - APS
Unidirectional magnetoresistance (UMR) has garnered extensive attention for its rich
physics and potential applications. The prevailing belief is that indispensable ferromagnetic …
physics and potential applications. The prevailing belief is that indispensable ferromagnetic …
Large magnetoelectric resistance in the topological Dirac semimetal α-Sn
The spin-momentum locking of surface states in topological materials can produce a
resistance that scales linearly with magnetic and electric fields. Such a bilinear …
resistance that scales linearly with magnetic and electric fields. Such a bilinear …
Nonlinear longitudinal and transverse magnetoresistances due to current-induced magnon creation-annihilation processes
Charge-spin conversion phenomena such as the spin Hall effect allow for the excitation of
magnons in a magnetic layer by passing an electric current in an adjacent nonmagnetic …
magnons in a magnetic layer by passing an electric current in an adjacent nonmagnetic …
Origins of observational errors in field sweep DC measurements for unidirectional magnetoresistance
Understanding the mechanisms of unidirectional magnetoresistance (UMR) has become an
important topic for its potential application of a two-terminal spin–orbit torque device. Field …
important topic for its potential application of a two-terminal spin–orbit torque device. Field …
Field-Free Type-x Spin-Orbit-Torque Switching by Easy-Axis Engineering
The current-induced type-x spin-orbit-torque (SOT) switching configuration describes the
orthogonal relationship between the magnetic easy axis (EA) of a ferromagnetic (FM) layer …
orthogonal relationship between the magnetic easy axis (EA) of a ferromagnetic (FM) layer …