This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

Self-heating in AlGaN/GaN high electron mobility transistors (HEMT) degrades device
performance and reliability. Under nominal operating conditions, a so-called hot spot …

To increase the reliability and the maximum performance of AlGaN/GaN high electron
mobility transistors (HEMTs), gate field plates are frequently used with surface passivation …

Gallium nitride (GaN) has emerged as one of the most attractive materials for radio
frequency (RF) and power conversion technologies that require high-power and high …

The effects of power density and heat generation zone size on the hotspot temperature of
AlGaN/GaN HFET devices were predicted using an electrothermal modeling approach. The …

An electro-thermal coupling simulator for GaN devices based on electron Monte Carlo (e-
MC) simulations is established. Taking GaN Metal Insulator Semiconductor High Electron …

The modeling of heat transport for small length scales requires accounting for the physics of
heat carrier transport such as the propagation, scattering, and relaxation of phonons …

Understanding the magnitude of the temperature in AlGaN/GaN heterostructure fi eld e ffect
transistors (HFETs) is a critical aspect of understanding their reliability and providing proper …

For the first time, an integrated thermal characterization scheme that generates a full two-
dimensional temperature map of GaN lateral devices has been developed. Through …

Localized heating is encountered in various scenarios, including the operation of transistors,
light-emitting diodes, and some thermal spectroscopy techniques. When localized heating …