Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …

Two-dimensional plasmons were investigated by terahertz time domain spectroscopy
observing experimentally the distinctive minima and inflection points in the transmission …

We report experimental results on the low-frequency noise in GaN/AlGaN transistors
fabricated under different conditions and evaluate different methods to extract the effective …

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium
gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN …

Realization of high crystal quality GaN layers on silicon substrates requires a great control
over epitaxy as well as detailed characterization of the buried defects and propagating …

Parabolic quantum wells (PQWs) are known as a promising candidate for a compact
terahertz (THz) source. PQWs have equidistant subbands that can be designed to be …

A comprehensive study of the electrical characteristics in Schottky diodes made of GaN: C
grown by hydride vapour phase epitaxy (HVPE) technology has been reported. The Schottky …

GaN-based structures are promising for production of radiation detectors and high-voltage
high-frequency devices. Particle detectors made of GaN are beneficial as devices …

Incoherent terahertz (THz) sources can be compact, stable, reliable and cheaper alternative
to coherent emitters for compact THz systems. Low power of incoherent THz emitters can be …

The low frequency (10 Hz-20 kHz) noise characteristics of GaN-based bow-tie (BT) diodes
designed for room temperature terahertz (THz) detection have been studied in the …