Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor
S Türkay, A Tataroğlu - Journal of Materials Science: Materials in …, 2021 - Springer
RF magnetron sputtering was used to grow silicon nitride (Si 3 N 4) thin film on GaAs
substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric …
substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric …
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs)
were studied in the temperature range of 80–400K. The investigation of various SDs …
were studied in the temperature range of 80–400K. The investigation of various SDs …
Frequency dependent dielectric spectroscopy of Au/n-Si structure with stannic oxide (SnO2) interfacial layer
S Karadeniz, DE Yıldız - Journal of Materials Science: Materials in …, 2023 - Springer
This study investigated the frequency dependent dielectric spectrum of Au/Si structures in
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
Frequency and voltage effects on the dielectric properties and electrical conductivity of Al–TiW–Pd2Si/n-Si structures
Different from conventional metal–Si compounds–n-Si structures, the thin film of TiW alloy
was deposited on Pd2Si–n-Si to form a diffusion barrier between aluminum (Al) and Pd2Si …
was deposited on Pd2Si–n-Si to form a diffusion barrier between aluminum (Al) and Pd2Si …
Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes
In this paper, we have studied the effects of temperature, bias and frequency on the
dielectric properties of Ni/SiO 2/p-Si/Al MIS diode. For that, we have carried out the …
dielectric properties of Ni/SiO 2/p-Si/Al MIS diode. For that, we have carried out the …
The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal …
MH Al-Dharob, A Kökce, DA Aldemir… - Journal of Physics and …, 2020 - Elsevier
Abstract Capacitance-voltage-temperature (C–VT) and conductance-voltage-temperature
(G/ω-VT) measurements of an Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal …
(G/ω-VT) measurements of an Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal …
AC conductivity and dielectric properties of SiO2–Na2O–B2O3–Gd2O3 glasses
The present paper studies the dielectric properties and ac conductivity of sodium
borosilicate glasses doped with varying concentrations of Gd 2 O 3, while maintaining the …
borosilicate glasses doped with varying concentrations of Gd 2 O 3, while maintaining the …
Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements
The dielectric properties of Ni/n-GaP Schottky diode were investigated in the temperature
range 140–300 K by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) …
range 140–300 K by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) …
The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures
In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO 2/n-
GaAs structures were investigated using capacitance–voltage (CV) and conductance …
GaAs structures were investigated using capacitance–voltage (CV) and conductance …
Dielectric and microwave-absorbing behavior of hydrated wheat starch-gluten systems in relation to water mobility
Y Wu, B Yan, Y Tao, N Zhang, Y Zhang, H Zhang… - Journal of Food …, 2024 - Elsevier
Microwave heating has become popular in wheat-based food processing owing to its
environmental friendliness, high-efficiency and low energy consumption. Water plays an …
environmental friendliness, high-efficiency and low energy consumption. Water plays an …