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Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
The statistics of electrical breakdown field (E bd) of Hf O 2 and Si O 2 thin films has been
evaluated over multiple length scales using macroscopic testing of standardized metal-oxide …
evaluated over multiple length scales using macroscopic testing of standardized metal-oxide …
Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors
F Mondon, S Blonkowski - Microelectronics Reliability, 2003 - Elsevier
Current leakage and breakdown of MIM capacitors using HfO2 and Al2O3–HfO2 stacked
layers were studied. Conduction in devices based upon HfO2 layers thinner than 8 nm is …
layers were studied. Conduction in devices based upon HfO2 layers thinner than 8 nm is …
[Књига][B] Dynamic RAM: technology advancements
MA Siddiqi - 2017 - books.google.com
Because of their widespread use in mainframes, PCs, and mobile audio and video devices,
DRAMs are being manufactured in ever increasing volume, both in stand-alone and in …
DRAMs are being manufactured in ever increasing volume, both in stand-alone and in …
A high-performance, high-density 28nm eDRAM technology with high-K/metal-gate
KC Huang, YW Ting, CY Chang, KC Tu… - 2011 International …, 2011 - ieeexplore.ieee.org
This paper presents industry's smallest 0.035 um 2 high performance embedded DRAM cell
with cylinder-type Metal-Insulator-Metal (MIM) capacitor and integrated into 28 nm High-K …
with cylinder-type Metal-Insulator-Metal (MIM) capacitor and integrated into 28 nm High-K …
A process technology for 0.16 μm embedded DRAM with fast logic speed and small DRAM cell
DH Suh, J Lee - Journal of the Electrochemical Society, 2004 - iopscience.iop.org
A process technology for 0.16 μm embedded dynamic random access memory (DRAM) with
gate length of 0.16 μm both in nmos and pmos, respectively, and DRAM cell size of 0.28 μm …
gate length of 0.16 μm both in nmos and pmos, respectively, and DRAM cell size of 0.28 μm …
Voltage and current stress induced variations in TiN/HfSixOy/TiN MIM capacitors
D Misra, J Kasinath, AN Chandorkar - Microelectronics Reliability, 2013 - Elsevier
In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal–
Insulator–Metal (MIM) capacitors by using constant voltage stress (CVS) and constant …
Insulator–Metal (MIM) capacitors by using constant voltage stress (CVS) and constant …
Origin of leakage paths driven by electric fields in Al-doped TiO2 films.
GS Park, SY Park, S Heo, O Kwon, K Cho… - … (Deerfield Beach, Fla …, 2014 - europepmc.org
The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM
under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM …
under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM …
MIM HfO/sub 2/low leakage capacitors for eDRAM integration at interconnect levels
P Mazoyer, S Blonkowski, F Mondon… - Proceedings of the …, 2003 - ieeexplore.ieee.org
An innovative 6 nm HfO/sub 2/MIM capacitor was integrated in interconnect levels for
eDRAM functions. HfO/sub 2/layers or Al/sub 2/O/sub 3/-HfO/sub 2/stacks were deposited by …
eDRAM functions. HfO/sub 2/layers or Al/sub 2/O/sub 3/-HfO/sub 2/stacks were deposited by …
Process Application and Research of Metal-Insulator-Metal Thin Film Capacitor by Plasma Etching
JT Lo - 2019 - search.proquest.com
Metal-insulator-metal capacitors are increasingly used on semiconductor wafers. As
electronic products on the market demand smaller dimensions and more powerful functions …
electronic products on the market demand smaller dimensions and more powerful functions …