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Thin-film electronics on active substrates: Review of materials, technologies and applications
In the last years, the development of new materials as well as advanced fabrication
techniques have enabled the transformation of electronics from bulky rigid structures into …
techniques have enabled the transformation of electronics from bulky rigid structures into …
Comprehensive review on electrical noise analysis of TFET structures
Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …
conventional CMOS due to their advantages like very low leakage current and steep sub …
A subthermionic tunnel field-effect transistor with an atomically thin channel
D Sarkar, X ** in semiconductor devices
G Gupta, B Rajasekharan… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
To overcome the limitations of chemical do** in nanometer-scale semiconductor devices,
electrostatic do** (ED) is emerging as a broadly investigated alternative to provide …
electrostatic do** (ED) is emerging as a broadly investigated alternative to provide …
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
Work function‐based metal–oxide–semiconductor hydrogen sensor and its functionality: A review
T Sahoo, P Kale - Advanced Materials Interfaces, 2021 - Wiley Online Library
Hydrogen, a nonpolluting gas, is emerging as an ideal, suitable, and economical energy
carrier. The current global non‐carbon hydrogen production is 105.8 MW in 2020 and is …
carrier. The current global non‐carbon hydrogen production is 105.8 MW in 2020 and is …
Performance assessment of the charge-plasma-based cylindrical GAA vertical nanowire TFET with impact of interface trap charges
In this article, a charge-plasma (CP)-based gate-all-around (GAA) silicon vertical nanowire
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …
Simulation study of multi-source hetero-junction tfet-based capacitor less 1t dram for low power applications
A capacitorless one-transistor dynamic random access memory (1T DRAM) based on multi-
source hetero-junction tunnel field-effect transistor (TFET) is presented in this work. The …
source hetero-junction tunnel field-effect transistor (TFET) is presented in this work. The …