Experimental analysis of novel telecom source materials and devices
P Harnedy - 2015 - cora.ucc.ie
Incumbent telecommunication lasers emitting at 1.5 µm are fabricated on InP substrates and
consist of multiple strained quantum well layers of the ternary alloy InGaAs, with barriers of …
consist of multiple strained quantum well layers of the ternary alloy InGaAs, with barriers of …
[PDF][PDF] Directed Modulation of Quantum Dash Se miconductor Laser.
A numerical study of the effect of injection current modulation on the dynamics of a quantum
dash semiconductor laser is presented. The control parameters chosen to affect the …
dash semiconductor laser is presented. The control parameters chosen to affect the …
[ΑΝΑΦΟΡΑ][C] اعتماد خرج لیزر شبه الموصل نوع النقطة الكمیة الممتدة على درجة الحرارة
محمد سالم جاسم… - Journal of College of …, 2018 - search.ebscohost.com
Journal of College of Education for pure sciences(JCEPS) Page 1 Journal of College of
Education for pure sciences(JCEPS) Web Site: http://jceps.utq.edu.iq/ Email: jceps@eps.utq.edu.iq …
Education for pure sciences(JCEPS) Web Site: http://jceps.utq.edu.iq/ Email: jceps@eps.utq.edu.iq …