Analyzing Carrier Density and Hall Mobility in Impurity‐Free Silicon Virtually Doped by External Defect Placement
S Nagarajan, I Ratschinski, S Schmult… - Advanced Functional …, 2024 - Wiley Online Library
Impurity do** at the nanoscale for silicon is becoming less efficient with conventional
techniques. Here, an alternative virtual do** method is presented for silicon that can …
techniques. Here, an alternative virtual do** method is presented for silicon that can …
Roadmap for Schottky barrier transistors
In this roadmap we consider the status and challenges of technologies that use the
properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as …
properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as …
A dressed singlet-triplet qubit in germanium
In semiconductor hole spin qubits, low magnetic field ($ B $) operation extends the
coherence time ($ T_\mathrm {2}^* $) but proportionally reduces the gate speed. In contrast …
coherence time ($ T_\mathrm {2}^* $) but proportionally reduces the gate speed. In contrast …