A review on emerging negative capacitance field effect transistor for low power electronics

SB Rahi, S Tayal, AK Upadhyay - Microelectronics Journal, 2021 - Elsevier
Power consumption is the major concern for conventional CMOS based integrated circuit
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …

Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics

S Valasa, VR Kotha, N Vadthiya - Materials Science in Semiconductor …, 2024 - Elsevier
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …

Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects

A Saeidi, T Rosca, E Memisevic, I Stolichnov… - Nano …, 2020 - ACS Publications
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced
one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold …

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

S Kamaei, A Saeidi, C Gastaldi, T Rosca… - npj 2D Materials and …, 2021 - nature.com
We report the fabrication process and performance characterization of a fully integrated
ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the …

Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study

A Saeidi, F Jazaeri, F Bellando… - IEEE electron device …, 2017 - ieeexplore.ieee.org
This letter reports for the first time a full experimental study of performance boosting of tunnel
FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the …

Dual cavity dielectric modulated ferroelectric charge plasma tunnel FET as biosensor: for enhanced sensitivity

S Singh, S Singh, MKA Mohammed… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric
charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity. By incorporating …

Computational investigation of negative capacitance coaxially gated carbon nanotube field-effect transistors

K Tamersit, MKQ Jooq… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we present a computational investigation on nanoscale coaxial-gate
negativecapacitance carbon nanotube field-effect transistor (NC CNTFET). The proposed …

Negative capacitance double-gate junctionless FETs: a charge-based modeling investigation of swing, overdrive and short channel effect

A Rassekh, JM Sallese, F Jazaeri… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
In this article, an analytical predictive model of the negative capacitance (NC) effect in
symmetric long channel double-gate junctionless transistor is proposed based on a charge …

Analysis and modeling of inner fringing field effect on negative capacitance FinFETs

YK Lin, H Agarwal, P Kushwaha… - … on Electron Devices, 2019 - ieeexplore.ieee.org
We investigate the impact of inner fringing fields on the negative capacitance FinFET (NC-
FinFET) and how this scales with the technology node. The 8-/7-nm technology node of the …

Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

K Tamersit, MKQ Jooq, MH Moaiyeri - Physica E: Low-dimensional Systems …, 2021 - Elsevier
This paper, numerically assesses the analog/RF performance of nanoscale negative
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …