[KİTAP][B] Quantum wells, wires and dots: theoretical and computational physics of semiconductor nanostructures

P Harrison, A Valavanis - 2016 - books.google.com
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and
computational, to develop an understanding of the electronic, optical and transport …

Size-dependent surface luminescence in ZnO nanowires

I Shalish, H Temkin, V Narayanamurti - Physical Review B, 2004 - APS
Nanometer sized whiskers (nanowires) offer a vehicle for the study of size-dependent
phenomena. While quantum-size effects are commonly expected and easily predicted, size …

Stimulated emission in semiconductor quantum wire heterostructures

E Kapon, DM Hwang, R Bhat - Physical Review Letters, 1989 - APS
We report the first observation of stimulated emission in quasi-one-dimensional
semiconductor quantum wires. Amplified spontaneous emission and stimulated emission …

Fabrication and optical properties of semiconductor quantum wells and superlattices

EO Göbel, K Ploog - Progress in Quantum Electronics, 1990 - Elsevier
3.3. 1. Elemental source conventional molecular beam epitaxy 3.3. 2. Metalorganic vapor
phase epitaxy (MO VPE) 3.3. 3. Gas-source molecular beam epitaxy 3.3. 4. Modulated beam …

[KİTAP][B] Physics of quantum well devices

BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …

Interband absorption in quantum wires. I. Zero-magnetic-field case

U Bockelmann, G Bastard - Physical Review B, 1992 - APS
We describe the theory of interband transitions in quasi-one-dimensional semiconductor
structures. It is based on the effective-mass approximation and takes into account the mixing …

On the multifaceted journey for the invention of epitaxial quantum dots

E Pelucchi - Progress in Crystal Growth and Characterization of …, 2023 - Elsevier
Epitaxial semiconductor quantum dots have been, in the last 40 years or so, at the center of
the research effort of a large community. The focus being on “semiconductor physics and …

Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition

S Tsukamoto, Y Nagamune, M Nishioka… - Journal of applied …, 1992 - pubs.aip.org
Successful fabrication of thin GaAs quantum wires (120–200 Å)×(200–300 Å) by a novel
metal‐organic chemical‐vapor‐deposition growth technique is reported. The GaAs quantum …

Eigenfunction-expansion method for solving the quantum-wire problem: Formulation

GA Baraff, D Gershoni - Physical Review B, 1991 - APS
We present a method of formulating the multiband-envelope-function equations for a
quantum structure whose internal interfaces are perpendicular planes. The method can be …

Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots

M Califano, P Harrison - Physical Review B, 2000 - APS
A single-band, constant-confining-potential model is applied to self-assembled InAs/GaAs
pyramidal dots in order to determine their electronic structure. The calculated energy …