This paper summarizes some of the essential aspects for the fabrication of functional
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …

In this article, structure optimization of high-k interfacial layer (IL), deposited between the
gate and the gate sidewall spacer, was performed in a 5-nm node nanosheet field-effect …

Highly doped (both n and p-type do**s) silicon nanowires (SiNWs) have been deposited
via Chemical Vapor Deposition and investigated as electrode materials for micro-capacitor …

Abstract pH was used as the main driving parameter for specifically immobilizing silicon
nanowires onto Si 3 N 4 microsquares at the surface of a SiO 2 substrate. Different pH …

The introduction of hydrogen chloride during the in situ do** of silicon nanowires (SiNWs)
grown using the vapor–liquid–solid (VLS) mechanism was investigated. Compared with non …

The miniaturisation of technology increasingly requires the development of both new
structures as well as novel techniques for their manufacture and modification …

Silicon nanotrees (SiNTrs) have been grown by Chemical Vapor Deposition (CVD) via gold
catalysis and a three steps process: trunks and branches growth are separated by a new …

The use of nanoporous anodic alumina as a template for silicon nanowire growth enables
the production of ultra dense nanowire arrays with density up to 8.10 9 cm− 2. The …

Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via
chemical vapor deposition on silicon substrate. These nanostructured silicon substrates …

Solution-based processing is a rapidly growing area in the electronics and photonics field
due to the possibility of reducing fabrication costs of materials for solar cells, transistors …