Acceleration of nonequilibrium Green's function simulation for nanoscale FETs by applying convolutional neural network model
S Souma, M Ogawa - IEICE Electronics Express, 2020 - jstage.jst.go.jp
We investigate the application of convolutional neural networks (CNNs) to accelerate
quantum mechanical transport simulations (based on the nonequilibrium Green's function …
quantum mechanical transport simulations (based on the nonequilibrium Green's function …
Simulation of quantum transport in double‐gate MOSFETs using the non‐equilibrium Green's function formalism in real‐space: a comparison of four methods
Quantum effects play an important role in determining the double‐gate (DG) MOSFETs
characteristics. The non‐equilibrium Green's function formalism (NEGF) in real‐space (RS) …
characteristics. The non‐equilibrium Green's function formalism (NEGF) in real‐space (RS) …
Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET
R Hosseini - Journal of Computational Electronics, 2016 - Springer
In this paper, we have analyzed the electrical characteristics of Strained Junctionless
Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport …
Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport …
Partial-Coupled Mode Space for quantum transport simulation in nanoscale double-gate MOSFETs
A novel computationally efficient approach for simulation of quantum transport in nanoscale
devices is proposed. The idea is based on partial coupling between the modes of the …
devices is proposed. The idea is based on partial coupling between the modes of the …
A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD
The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by
the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd …
the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd …
Simulation of quantum ballistic transport in FinFETs
Quantum effects play a vital role in determining the transistor characteristics of FinFET
devices. Quantum confinement, coherent ballistic transport, and quantum mechanical …
devices. Quantum confinement, coherent ballistic transport, and quantum mechanical …
[PDF][PDF] Simulation of Quantum Transport in Double Gate MOSFETs: Coupled-Mode Space versus Real Space
OA Omar - academia.edu
Gate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both
coupled-mode space (CMS) and real space (RS) is reported. The transport models were …
coupled-mode space (CMS) and real space (RS) is reported. The transport models were …
[PDF][PDF] “Partial-coupled mode-space” a new approach for efficient simulation of ballistic quantum transport in multi-gate devices
A novel approach is proposed, termed Partial-Coupled Mode Space (PCMS), for simulation
of quantum transport in nanoscale devices. The PCMS integrates advantage of Coupled …
of quantum transport in nanoscale devices. The PCMS integrates advantage of Coupled …
Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space
Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium
Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) …
Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) …
[PDF][PDF] Simulation of Electronic States in a Nanowire Fiel-effect Transistor
JMC Ares - 2016 - roderic.uv.es
Nanowires are emerging as promising candidates to form the basis of field-effect transistors,
among other devices. Nanowire-based field-effect transistors are foreseen to be industrially …
among other devices. Nanowire-based field-effect transistors are foreseen to be industrially …