Surface acoustic wave (SAW) devices have been widely used in different fields and will
continue to be of great importance in the foreseeable future. These devices are compact …

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

This letter describes the procedure to manufacture high-performance surface acoustic wave
(SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz …

In this letter, highly (0002) oriented ZnO piezoelectric films were deposited on high acoustic
velocity SiC substrates. Surface acoustic wave (SAW) devices on ZnO/SiC layered structure …

The paper presents the manufacturing and characterization of GaN based SAW (surface
acoustic wave) type temperature sensors. In contrast with most SAW sensor structures …

This letter investigates the applicability of Sezawa propagation mode for various GaN/Si
surface acoustic wave (SAW) temperature sensor structures. First, different acoustic …

This paper presents the fabrication and characterization of a GHz operating surface acoustic
wave (SAW)-based pressure sensor on a 1.2-μm-thin GaN membrane. Two types of …

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave
(SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key …

Thin AlN piezoelectric layers have been deposited on high resistivity Si and glass substrates
by reactive RF magnetron sputtering, in order to manufacture one-port gigahertz operating …

This paper proposes high sensitivity temperature sensors based on single port surface
acoustic wave (SAW) devices with GHz resonance frequencies, developed on GaN/SiC and …