Recent developments in theoretical techniques have significantly improved the predictive
power of density-functional-based calculations. In this review, we discuss how such …

Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …

Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-
increasing demands for high-performance displays owing to their high efficiency, brightness …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …

Point defects in semiconductors and insulators form an exciting system for realizing quantum
technologies, including quantum computing, communication, and metrology. Defects …

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …

We investigate the electrical and optical properties of oxygen vacancies (VO), zinc
vacancies (V Zn), hydrogenated V Zn, and isolated dangling bonds in ZnO using hybrid …

This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …