Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

In this paper we review the subject of oxide breakdown (BD), focusing our attention on the
case of the gate dielectrics of interest for current Si microelectronics, ie, Si oxides or …

Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

This book presents an in-depth treatment of various power reduction and speed
enhancement techniques based on multiple supply and threshold voltages. A detailed …

The properties of the so-called time dependent dielectric breakdown (TDDB) of silicon
dioxide-based gate dielectric for microelectronics technology have been investigated and …

When the gate insulator of a metal–oxide–semiconductor structure is subjected to electrical
stress, traps or defects are progressively generated inside the oxide that eventually lead to …

Insulating films are essential in multiple electronic devices because they can provide
essential functionalities, such as capacitance effects and electrical fields. Two-dimensional …

Various 2D/3D heterostructures can be created by harnessing the advantages of both the
layered two-dimensional semiconductors and bulk materials. A semiconducting gate field …

A physical model has been developed which complies with the experimental observation on
the failure mechanism of ultrathin gate oxide breakdown during constant voltage stress …