The change in refractive index Delta n produced by injection of free carriers in InP, GaAs,
and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap …

With solar conversion efficiencies surpassing 20%, organometallic perovskites show
tremendous promise for solar cell technology. Their high brightness has also led to …

Ultrafast optical spectroscopy delivers unparalleled insights into the dynamic response of
photoactive materials, including semiconducting, photonic and phase-change materials. The …

The exceptional optoelectronic properties of metal halide perovskites have been illuminated
by extensive spectroscopic studies. Recent measurements suggest strong photoinduced …

An overview of the different contributions due to carrier-induced effects that appear in
InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the …

We propose and analyse a GaAs-based optical switch having a ring resonator configuration
which can switch optical telecommunication signals over the 1300 nm and 1500 nm bands …

This work aims at a systematic study of phase modulation in GaAs/AlGaAs double‐
heterostructure waveguides with different do** profiles. Both theoretical (part I) and …

A PpinN, GaAs-AlGaAs, TE/TM mode phase modulator, which has both the high phase shift
efficiency of a pn homojunction modulator and the high speed associated with a PiN …

The refractive index change induced by depletion of highly doped n-type InGaAsP materials
is calculated. A new, numerically simple and accurate model for the high carrier density …

Advances in robotic control and sensing have propelled the rise of automated scientific
laboratories capable of high-throughput experiments. However, automated scientific …