Dielectric ceramic capacitors, with the advantages of high power density, fast charge-
discharge capability, excellent fatigue endurance, and good high temperature stability, have …

Lead zirconate (PbZrO 3 or PZ)-based antiferroelectric (AFE) materials, as a group of
important electronic materials, have attracted increasing attention for their potential …

With the fast development of the power electronics, dielectric materials with high energy-
storage density, low loss, and good temperature stability are eagerly desired for the potential …

Perovskite solid solution ceramics of (1− x) BaTiO 3–x Bi (Mg 2/3 Nb 1/3) O 3 (BT–BMN)(x=
0.05–0.2) were synthesized by solid‐state reaction technique. The results show that the …

The intricacies in identifying the appropriate material system for energy storage applications
have been the biggest struggle of the scientific community. Countless contributions by …

The energy storage properties of antiferroelectric (AFE) Pb 0.96 La 0.04 Zr 0.98 Ti 0.02 O 3
(PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric …

Capacitor technologies are as varied as the applications that they enable, but one of the
common themes in advanced capacitors for consumer electronics is a desire for increased …

Antiferroelectric (AFE) Pb0. 92La0. 08Zr0. 95Ti0. 05O3 (PLZT) films were grown on nickel
foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field …

9 Pb (Mg 1/3 Nb 2/3) O 3-0.1 PbTiO 3 (PMN-PT 90/10) relaxor ferroelectric thin films with
different thicknesses were deposited on the LaNiO 3/Si (100) by the radio-frequency (RF) …

Abstract Flexible antiferroelectric (AFE) Pb0. 94La0. 04Zr0. 97Ti0. 03O3 (PLZT) thick‐film
capacitors were fabricated on nickel foil substrates using sol‐gel method. The thick PLZT …