The state of application of atom probe tomography to electronic materials is assessed. The
benefits and challenges of the technique are discussed with regard to its impact on this field …

The preferential retention of high evaporation field chemical species at the sample surface in
atom-probe tomography (eg, boron in silicon or in metallic alloys) leads to correlated field …

High-angle annular dark field scanning transmission electron microscopy and atom probe
tomography of the V-shaped pits in GaInN/GaN multiple quantum wells have revealed that a …

The formation of Ni silicide during the reaction between Ni (5% Pt) and a Si (100) substrate
has been analyzed by differential scanning calorimetry (DSC), in situ x-ray diffraction (XRD) …

The redistribution of Pt after heat treatment at 290° C for 1h has been analyzed by large-
angle atom probe tomography assisted by femtosecond laser pulses. Two silicides Ni2Si …

It is shown by SEM imaging of the tip and by observing the emission pattern of the
evaporated atoms that laser assisted evaporation in an atom probe can lead to …

Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications
covers the basic fundamentals, techniques, applications, and latest developments in the …

The laser assisted atom probe has been proposed as a metrology tool for next generation
semiconductor technologies requiring subnanometer depth resolution. In order to support its …

The applicability of atom probe to the characterization of photovoltaic devices is presented
with special emphasis on high efficiency III–V and low cost ITO/a-Si: H heterojunction cells …

We show that a model based on the surface optical rectification effect associated with the
nonlinear response of free electrons may explain quantitatively, without adjustable …