Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

This paper describes a numerical study of ultrathin CIGS solar cell using the one-
dimensional simulation program. The various properties of the absorber layer such as the …

The faceting of a growing crystal is theoretically investigated by a continuum model
including the incorporation kinetics of adatoms. This allows us for predictions beyond a …

Integrating III–V gain elements in the silicon photonics platform via selective area
heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits …

We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used
instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs …

Interfaces are ubiquitous in modern electronics and assessing their properties is crucial
when it comes to device reliability. Here, we present nonequilibrium molecular dynamics …

The development of three-dimensional architectures in semiconductor technology is paving
the way to new device concepts for various applications, from quantum computing to single …

3C-SiC is a promising material for low-voltage power electronic devices but its growth is still
challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable …

Nano-heteroepitaxial growth of GaAs on Si (001) by metal organic vapor phase epitaxy was
investigated to study emerging materials phenomena on the nano-scale of III–V/Si …

We report the epitaxial growth of GaAs on Ge buffers on Si (001) substrates covered by SiO
2 masks patterned with 3 μm diameter circular windows by metalorganic chemical vapor …