Developments in voltage-controlled subnanosecond magnetization switching
We review the current status of research on magnetization switching that utilizes the voltage-
controlled magnetic anisotropy (VCMA) effect. In particular, we focus on the magnetization …
controlled magnetic anisotropy (VCMA) effect. In particular, we focus on the magnetization …
Voltage-gate-assisted spin-orbit-torque magnetic random-access memory for high-density and low-power embedded applications
The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
Spin-transfer torque magnetoresistive random access memory technology status and future directions
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile
memory technology with a unique combination of speed, endurance, density and ease of …
memory technology with a unique combination of speed, endurance, density and ease of …
Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for
novel logic devices has never been greater, with spin-based devices offering scaling …
novel logic devices has never been greater, with spin-based devices offering scaling …
Field-free switching of VG-SOT-pMTJ device through the interplay of SOT, exchange bias, and VCMA effects
S Alla, V Kumar Joshi, S Bhat - Journal of Applied Physics, 2023 - pubs.aip.org
Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias
field ( HEX), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …
field ( HEX), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …
Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory
S Sin, S Oh - Scientific Reports, 2023 - nature.com
Spintronic devices are regarded as a promising solution for future computing and memory
technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS …
technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS …
Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications
C Jiang, J Li, H Zhang, S Lu, P Li, C Wang… - Journal of …, 2023 - iopscience.iop.org
We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …
Review of voltage-controlled magnetic anisotropy and magnetic insulator
This Festschrift is dedicated to Chia-Ling Chien on the occasion of his eightieth birthday.
Prof. Chien is one of the pioneering physicists in the field of spintronics with groundbreaking …
Prof. Chien is one of the pioneering physicists in the field of spintronics with groundbreaking …
Strain-mediated voltage controlled magnetic anisotropy based switching for magnetic memory applications
Reliability and packing density concerns are the two major shortcomings of spin transfer
torque and spin orbit torque based magnetic memory, respectively. Voltage controlled …
torque and spin orbit torque based magnetic memory, respectively. Voltage controlled …