Optoelectronic devices are becoming increasingly important due to their compatibility with
CMOS fabrication technology and their superior performance in all dimensions compared to …

The study of hydrogenated amorphous silicon, a-Si: H has become an active and large
subfield of growing interest in noncrystalline semiconductors. This paper reviews recent …

Luminescence and related investigations of recombination in hydrogenated amorphous
silicon prepared by glow discharge and sputtering are described. Emphasis is given to a …

A scaling theory is developed to describe the time evolution of the irreversible diffusive
recombination process A+ B→ inert. Fluctuations are shown to alter radically the decay laws …

A key characterization of dispersion in aquifers and other porous media has been to map the
effects of inhomogeneous velocity fields onto a Fickian dispersion term (D) within the context …

(2) g(E) = go e-(E-E)lkr. Page 1 Solid State Communications, Vol. 40, pp. 85-89. Pergamon
Press Ltd. 1981. Printed in Great Britain. 0038-1098[81/370085-05 $02.00[0 THERMALIZATION …

Recombination mediated by band tail states is shown to substantially reduce the maximum
achievable output voltage in amorphous silicon hydride solar cells. The maximum open …

Dielectric relaxation in amorphous materials is treated in a defect-diffusion model where
relaxation occurs when a mobile defect, such as a vacancy, reaches a frozen-in dipole. The …

The recombination lifetime in phosphorus-doped hydrogenated amorphous silicon is
determined from the dispersive photocurrent decay following a short-pulse excitation. The …

To obtain detailed information about recombination processes near room temperature in a-
Si: H we have measured the steady-state and transient response of luminescence, light …