An analytical charge model for double-gate tunnel FETs
An analytical charge model for double gate (DG) tunnel FETs (TFETs) is proposed. By
splitting the TFET into a series combination of a gated tunnel diode and a DG MOSFET, we …
splitting the TFET into a series combination of a gated tunnel diode and a DG MOSFET, we …
Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET
In this study, an analytical model for surface potential and threshold voltage for undoped (or
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect
A compact Lambert W function-based model is proposed to analyze the drain current of
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
Triple metal surrounding gate junctionless tunnel FET based 6T SRAM design for low leakage memory system
The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
A universal core model for multiple-gate field-effect transistors. Part I: Charge model
A universal core model for multiple-gate field-effect transistors (Mug-FETs) is proposed. The
proposed charge and drain current models are presented in Parts I and II, respectively. It is …
proposed charge and drain current models are presented in Parts I and II, respectively. It is …
A compact model for double-gate heterojunction tunnel FETs
Y Dong, L Zhang, X Li, X Lin… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A compact model for generic heterojunction tunnel FETs (H-TFET) is developed to simulate
H-TFET formed by different source/body material systems. The model is based on the device …
H-TFET formed by different source/body material systems. The model is based on the device …
Compact model of drain current in short-channel triple-gate FinFETs
N Fasarakis, A Tsormpatzoglou… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
An analytical compact drain current model for undoped (or lightly doped) short-channel triple-
gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum …
gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum …
A universal core model for multiple-gate field-effect transistors. Part II: Drain current model
A universal drain current model for multiple-gate field-effect transistors (FETs)(Mug-FETs) is
proposed. In Part I, a universal charge model was derived using the arbitrary potential …
proposed. In Part I, a universal charge model was derived using the arbitrary potential …
Subthreshold modeling of tri-gate junctionless transistors with variable channel edges and substrate bias effects
In this paper, subthreshold channel potential, current, swing, threshold voltage, and drain-
induced barrier lowering models of short-channel tri-gate junctionless field-effect transistors …
induced barrier lowering models of short-channel tri-gate junctionless field-effect transistors …
Analytical model of center potential in GaN vertical junctionless power Fin-MOSFETs for fast device-design optimization
In this work, we present an analytical model for fast optimization of gallium nitride vertical
junctionless (VJ) power Fin-MOSFET device design. The derived model faithfully captures …
junctionless (VJ) power Fin-MOSFET device design. The derived model faithfully captures …