Visualizing electronic structures of quantum materials by angle-resolved photoemission spectroscopy

H Yang, A Liang, C Chen, C Zhang… - Nature Reviews …, 2018 - nature.com
Electronic structures are critical characteristics that determine the electrical, magnetic and
optical properties of materials. With the capability of directly visualizing band dispersions …

Visualizing electrostatic gating effects in two-dimensional heterostructures

PV Nguyen, NC Teutsch, NP Wilson, J Kahn, X **a… - Nature, 2019 - nature.com
The ability to directly monitor the states of electrons in modern field-effect devices—for
example, imaging local changes in the electrical potential, Fermi level and band structure as …

Boosting photocatalytic hydrogen production via enhanced exciton dissociation in black phosphorus quantum Dots/TiO2 heterojunction

R Guan, L Wang, D Wang, K Li, H Tan, Y Chen… - Chemical Engineering …, 2022 - Elsevier
The Coulomb interactions between excited electrons and holes have a very important
influence on the photophysical processes in 2D semiconductors. Exciton dissociation is one …

Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer

F Liu, ME Ziffer, KR Hansen, J Wang, X Zhu - Physical review letters, 2019 - APS
A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the
poorly screened Coulomb potential, which leads to a large exciton binding energy (E b) and …

Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors

R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li… - Physical Review …, 2018 - APS
Two-dimensional (2D) semiconductors, eg, Mo S 2 and phosphorene, are promising
candidates for the channel materials of next-generation field-effect transistors (FETs) …

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor

Z Qiu, M Trushin, H Fang, I Verzhbitskiy, S Gao… - Science …, 2019 - science.org
Understanding the remarkable excitonic effects and controlling the exciton binding energies
in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in …

Performance limit of monolayer MoSi 2 N 4 transistors

X Sun, Z Song, N Huo, S Liu, C Yang, J Yang… - Journal of Materials …, 2021 - pubs.rsc.org
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

Enhanced electron-phonon interaction in multivalley materials

T Sohier, E Ponomarev, M Gibertini, H Berger… - Physical Review X, 2019 - APS
We report a combined experimental and theoretical investigation that reveals a new
mechanism responsible for the enhancement of electron-phonon coupling in doped …

Sub-5 nm Gate Length Monolayer MoTe2 Transistors

Q Li, J Yang, Q Li, S Liu, L Xu, C Yang… - The Journal of …, 2021 - ACS Publications
Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-
dimensional (2D) semiconductors have been proposed as alternative channel materials …

Electronic structure theory of strained two-dimensional materials with hexagonal symmetry

S Fang, S Carr, MA Cazalilla, E Kaxiras - Physical Review B, 2018 - APS
We derive electronic tight-binding Hamiltonians for strained graphene, hexagonal boron
nitride, and transition-metal dichalcogenides based on Wannier transformation of ab initio …