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Visualizing electronic structures of quantum materials by angle-resolved photoemission spectroscopy
Electronic structures are critical characteristics that determine the electrical, magnetic and
optical properties of materials. With the capability of directly visualizing band dispersions …
optical properties of materials. With the capability of directly visualizing band dispersions …
Visualizing electrostatic gating effects in two-dimensional heterostructures
PV Nguyen, NC Teutsch, NP Wilson, J Kahn, X **a… - Nature, 2019 - nature.com
The ability to directly monitor the states of electrons in modern field-effect devices—for
example, imaging local changes in the electrical potential, Fermi level and band structure as …
example, imaging local changes in the electrical potential, Fermi level and band structure as …
Boosting photocatalytic hydrogen production via enhanced exciton dissociation in black phosphorus quantum Dots/TiO2 heterojunction
R Guan, L Wang, D Wang, K Li, H Tan, Y Chen… - Chemical Engineering …, 2022 - Elsevier
The Coulomb interactions between excited electrons and holes have a very important
influence on the photophysical processes in 2D semiconductors. Exciton dissociation is one …
influence on the photophysical processes in 2D semiconductors. Exciton dissociation is one …
Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer
A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the
poorly screened Coulomb potential, which leads to a large exciton binding energy (E b) and …
poorly screened Coulomb potential, which leads to a large exciton binding energy (E b) and …
Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors
R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li… - Physical Review …, 2018 - APS
Two-dimensional (2D) semiconductors, eg, Mo S 2 and phosphorene, are promising
candidates for the channel materials of next-generation field-effect transistors (FETs) …
candidates for the channel materials of next-generation field-effect transistors (FETs) …
Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
Understanding the remarkable excitonic effects and controlling the exciton binding energies
in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in …
in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Enhanced electron-phonon interaction in multivalley materials
We report a combined experimental and theoretical investigation that reveals a new
mechanism responsible for the enhancement of electron-phonon coupling in doped …
mechanism responsible for the enhancement of electron-phonon coupling in doped …
Sub-5 nm Gate Length Monolayer MoTe2 Transistors
Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-
dimensional (2D) semiconductors have been proposed as alternative channel materials …
dimensional (2D) semiconductors have been proposed as alternative channel materials …
Electronic structure theory of strained two-dimensional materials with hexagonal symmetry
We derive electronic tight-binding Hamiltonians for strained graphene, hexagonal boron
nitride, and transition-metal dichalcogenides based on Wannier transformation of ab initio …
nitride, and transition-metal dichalcogenides based on Wannier transformation of ab initio …