Effect of N2O ratio on the crystallization temperature of ZrO2 film deposited on Si by reactive...

Substoichiometric zirconia thin films prepared by reactive sputtering of metallic zirconium using a direct current ion beam source

T Götsch, B Neumann, B Klötzer, S Penner - Surface Science, 2019 - Elsevier
An ultra-high-vacuum-compatible direct current ion beam sputter source is used to deposit
strongly defective zirconium dioxide thin films by operation in high vacuum with different …
Guardar Citar Citado por 8 Artículos relacionados Las 3 versiones
[Free GPT-4]
[PDF] optica.org

Preparation of sol-gel ZrO2 films with high laser-induced damage threshold under high temperature

Y Zhu, M Ma, P Zhang, W Cai, D Li, C Xu - Optics Express, 2019 - opg.optica.org
In this study, three different types of ZrO_2 films were prepared with different precursors and
additives using the sol-gel method. High-temperature annealing was implemented to …
Guardar Citar Citado por 7 Artículos relacionados Las 4 versiones

Crystal growth kinetics of ultra-thin ZrO2 film on Si by differential scanning calorimetry

SAKM Faruque, D Debnath, B Giri… - Journal of Crystal …, 2017 - Elsevier
Crystal growth kinetics of thin ZrO 2 film deposited on Si is described in the framework of
Johnson, Mehl and Avrami (JMA) equation and Kissinger method. Differential scanning …
Guardar Citar Citado por 1 Artículos relacionados Las 4 versiones