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ELDRS in bipolar linear circuits: A review
Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar linear transistors was first identified
in bipolar microcircuit transistors in 1991 and demonstrated in bipolar linear circuits in 1994 …
in bipolar microcircuit transistors in 1991 and demonstrated in bipolar linear circuits in 1994 …
Effects of bias and temperature on interface-trap annealing in MOS and linear bipolar devices
This article reviews the effects of applied bias and temperature on Si/SiO 2 interface-trap
buildup and annealing rates. Electrical and spectroscopic methods are described to …
buildup and annealing rates. Electrical and spectroscopic methods are described to …
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices
An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …
Effects of interface traps and hydrogen on the low-frequency noise of irradiated MOS devices
A re-evaluation of experimental results within the context of first-principles calculations
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
A Quantitative Model for ELDRS and Degradation Effects in Irradiated Oxides Based on First Principles Calculations
A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar
devices is developed. Quantitative agreement is found with measured data over a wide …
devices is developed. Quantitative agreement is found with measured data over a wide …
Defect Interactions of in : Implications for ELDRS and Latent Interface Trap Buildup
The energetics of the interactions between molecular hydrogen and common defects in SiO
2 that are typically associated with O deficiency have been obtained using atomic-scale …
2 that are typically associated with O deficiency have been obtained using atomic-scale …
Electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices
We present evidence that enhanced low-dose-rate sensitivity (ELDRS) in lateral and
substrate pnp bipolar devices can occur because of the much lower probability for electron …
substrate pnp bipolar devices can occur because of the much lower probability for electron …
Calculations of radiation dose-rate sensitivity of bipolar transistors
HP Hjalmarson, RL Pease… - IEEE Transactions on …, 2008 - ieeexplore.ieee.org
Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular
mechanisms are shown to produce reduced effects at high dose rates. Calculations using …
mechanisms are shown to produce reduced effects at high dose rates. Calculations using …
Aging effects and latent interface-trap buildup in MOS transistors
Effects of~ 35 years of aging during storage are investigated on the radiation response and
1/noise of Oki nMOS and pMOS transistors with high oxygen vacancy densities in SiO 2 …
1/noise of Oki nMOS and pMOS transistors with high oxygen vacancy densities in SiO 2 …
Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity
The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-
D) model that incorporates the physical mechanisms contributing to dose-rate effects in the …
D) model that incorporates the physical mechanisms contributing to dose-rate effects in the …