Spin-transfer torque switched magnetic tunnel junction for memory technologies
JZ Sun - Journal of Magnetism and Magnetic Materials, 2022 - Elsevier
A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …
Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction
Y Wang, H Cai, LA de Barros Naviner… - … on Electron Devices, 2016 - ieeexplore.ieee.org
Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile
memories thanks to its high speed, low power, infinite endurance, and easy integration with …
memories thanks to its high speed, low power, infinite endurance, and easy integration with …
Robust ultra-low power non-volatile logic-in-memory circuits in FD-SOI technology
H Cai, Y Wang, LADB Naviner… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
In the upcoming internet of things (IoT) era, spin transfer torque magnetic tunnel junction
(STT-MTJ) based non-volatile (NV) memory and circuits for IoT nodes and normally-off …
(STT-MTJ) based non-volatile (NV) memory and circuits for IoT nodes and normally-off …
Analytical macrospin modeling of the stochastic switching time of spin-transfer torque devices
Owing to their nonvolatility, outstanding endurance, high write and read speeds, and CMOS
process compatibility, spin-transfer torque magnetoresistive memories (MRAMs) are prime …
process compatibility, spin-transfer torque magnetoresistive memories (MRAMs) are prime …
Dynamics of spin torque switching in all-perpendicular spin valve nanopillars
We present a systematic experimental study of the spin-torque-induced magnetic switching
statistics at room temperature, using all-perpendicularly magnetized spin-valves as a model …
statistics at room temperature, using all-perpendicularly magnetized spin-valves as a model …
[PDF][PDF] Progress of STT-MRAM technology and the effect on normally-off computing systems
H Yoda, S Fujita, N Shimomura… - 2012 International …, 2012 - picture.iczhiku.com
Figure 1-1 shows an access-speed vs. density map of existing memories. The ideal memory,
a fast and dense non-volatile memory with unlimited endurance, does not exist …
a fast and dense non-volatile memory with unlimited endurance, does not exist …
Exploiting STT-MRAMs for cryogenic non-volatile cache applications
This paper evaluates the potential of spin-transfer torque magnetic random-access
memories (STT-MRAMs) operating at cryogenic temperatures. Our study was carried out at …
memories (STT-MRAMs) operating at cryogenic temperatures. Our study was carried out at …
Spin–orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions
S Isogami, Y Shiokawa, A Tsumita, E Komura… - Scientific Reports, 2021 - nature.com
We have studied current induced magnetization switching in W/CoFeB/MgO based three
terminal magnetic tunnel junctions. The switching driven by spin—orbit torque (SOT) is …
terminal magnetic tunnel junctions. The switching driven by spin—orbit torque (SOT) is …
A novel circuit design of true random number generator using magnetic tunnel junction
Random numbers are widely used in the cryptography and security systems. However, most
of the true random number generators (TRNG) which use physical randomness are with …
of the true random number generators (TRNG) which use physical randomness are with …
Magnetization switching probability in the dynamical switching regime driven by spin-transfer torque
T Taniguchi, S Isogami, Y Shiokawa, Y Ishitani… - Physical Review B, 2022 - APS
We study magnetization switching in the dynamical regime for in-plane magnetized systems,
useful for field-free spin-orbit torque switching devices. We derive a formula for the switching …
useful for field-free spin-orbit torque switching devices. We derive a formula for the switching …