With the development of microelectronics, the demand for continuously miniaturized feature
sizes has driven continuous progress in lithography technology. Extreme ultraviolet (EUV) …

The need for decreasing semiconductor device critical dimensions at feature sizes below the
20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) …

The miniaturization of microelectromechanical systems (MEMS) physical sensors is driven
by global connectivity needs and is closely linked to emerging digital technologies and the …

The increasing global environmental and energy crisis has urgently motivated the
advancement of sustainable materials. Significant effort has been focused on develo** …

With the demand for increasingly smaller feature sizes, extreme ultraviolet (EUV) lithography
has become the cutting-edge technology for fabricating highly miniaturized integrated …

The performance of previous generation material (ZER02# 1) were reported at EUVL
symposium in 2019. Despite the good performance, the stability issue at development …

Investigations to evaluate the extreme ultraviolet (EUV) lithographic performance of 160 nm
thick poly (methyl methacrylate) with 13.5 nm wavelength EUV light were performed using a …

Hydrogenated silsesquioxane (HSQ) is a key inorganic electron beam resist, celebrated for
its sub-10 nm resolution and etching resistance, but it faces challenges with stability and …

In this work, we report the lithography performance of main chain scission type resists
exposed with the ASML NXE3300B EUV scanner. We also detail the advancements …

In this work, we introduce main chain scission resists with new concept for High-NA's
generation and report their lithography performance. Zeon has developed a new resist …