An 80-tile sub-100-w teraflops processor in 65-nm cmos

SR Vangal, J Howard, G Ruhl, S Dighe… - IEEE Journal of solid …, 2008 - ieeexplore.ieee.org
This paper describes an integrated network-on-chip architecture containing 80 tiles
arranged as an 8x10 2-D array of floating-point cores and packet-switched routers, both …

Trading off cache capacity for reliability to enable low voltage operation

C Wilkerson, H Gao, AR Alameldeen, Z Chishti… - ACM SIGARCH …, 2008 - dl.acm.org
One of the most effective techniques to reduce a processor's power consumption is to
reduce supply voltage. However, reducing voltage in the context of manufacturing-induced …

1.4 5G wireless communication: An inflection point

V Ilderem - 2019 IEEE international solid-state circuits …, 2019 - ieeexplore.ieee.org
The 5G era is upon us, ushering in new opportunities for technology innovation across the
computing and connectivity landscape. The advent of the Internet of Things has resulted in …

Transistor-and circuit-design optimization for low-power CMOS

MC Chang, CS Chang, CP Chao… - … on Electron Devices, 2007 - ieeexplore.ieee.org
CMOS-technology scaling has moved to a power-constrained condition regardless of the
application segments. Power management in advanced CMOS technology drives the need …

Advances in microprocessor cache architectures over the last 25 years

R Iyer, V De, R Illikkal, D Koufaty, B Chitlur… - IEEE Micro, 2021 - ieeexplore.ieee.org
Over the last 25 years, the use of caches has advanced significantly in mainstream
microprocessors to address the memory wall challenge. As we transformed microprocessors …

[PDF][PDF] Static noise margin analysis of various SRAM topologies

S Birla, RK Singh, M Pattnaik - International Journal of …, 2011 - researchgate.net
In the present time, great emphasis has been given to the design of low-power and high
performance memory circuits. As an SRAM is a critical component in both high-performance …

A low-power electronic nose signal-processing chip for a portable artificial olfaction system

KT Tang, SW Chiu, MF Chang… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The bulkiness of current electronic nose (E-Nose) systems severely limits their portability.
This study designed and fabricated an E-Nose signal-processing chip by using TSMC 0.18 …

A 45-nm bulk CMOS embedded SRAM with improved immunity against process and temperature variations

K Nii, M Yabuuchi, Y Tsukamoto… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
The variation tolerant assist circuits of an SRAM against process and temperature are
proposed. Passive resistances are introduced to the read assist circuit with replica memory …

A 0.7 V Single-Supply SRAM With 0.495 m Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme

K Kushida, A Suzuki, G Fukano… - IEEE journal of solid …, 2009 - ieeexplore.ieee.org
We proposed a novel SRAM architecture with a high-density cell in low-supply-voltage
operation. A self-write-back sense amplifier realizes cell failure rate improvement by more …

[HTML][HTML] SRAM cell leakage control techniques for ultra low power application: a survey

P Bikki, P Karuppanan - Circuits and systems, 2017 - scirp.org
Low power supply operation with leakage power reduction is the prime concern in modern
nano-scale CMOS memory devices. In the present scenario, low leakage memory …