[HTML][HTML] Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET
This paper presents an analytical investigation of the drain current model for symmetric short
channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion …
channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion …
An Accurate Physical Based Transport Model of Gate-All-Around In x Ga1–x As Nanowire MOSFET Using Gaussian-Like Transmission Co-Efficient
This work presents rigorous transport study of III–V Gate-All-Around (GAA) MOSFET to
derive accurate device current profile. To model the transport in ballistic regime of In x Ga1 …
derive accurate device current profile. To model the transport in ballistic regime of In x Ga1 …
Analytical modeling of electrostatic and transport phenomena in inversion-type inGaAs nanowire MOSFET
IKM Reaz Rahman - 2021 - lib.buet.ac.bd
The prime motivation driving the semiconductor industry to fabricate devices of extremely
reduced dimension is the innovation of novel technologies that enable manufacturers to …
reduced dimension is the innovation of novel technologies that enable manufacturers to …
Advanced Clocking and Power Management Techniques for Microprocessors
V Sathe - 2019 - digital.lib.washington.edu
Ensuring high performance and low-power is the goal for almost all system-on-
chips~(SoCs). With the recent slow-down in technology scaling, innovations in circuits and …
chips~(SoCs). With the recent slow-down in technology scaling, innovations in circuits and …
[PDF][PDF] Advanced Clocking and Power Management Techniques for Microprocessors
Ensuring high performance and low-power is the goal for almost all system-on-chips (SoCs).
With the recent slow-down in technology scaling, innovations in circuits and systems are …
With the recent slow-down in technology scaling, innovations in circuits and systems are …