When semiconductor crystals are made into the form of thin sheets, ie, nanomembranes,
their properties and behaviors may be remarkably different from their bulk counterparts. A …

For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

Controllable synthesis of large-scale and high-quality graphene film is a basis for
development of electronic and spintronic devices. Chemical vapor deposition (CVD) has …

The synthesis of graphene directly on Ge and on Ge deposited on Si provides a scalable
route toward integrating graphene onto conventional semiconductors. Here, we elucidate …

Directed self-assembly of block copolymers (BCPs) enables nanofabrication at sub-10 nm
dimensions, beyond the resolution of conventional lithography. However, directing the …

We investigated the interfacial electronic structure of the bidimensional interface of single-
layer graphene on a germanium substrate. The procedure followed a well-established …

Wrap** polymers are useful for sorting high purity suspensions of semiconducting carbon
nanotubes (CNTs) in organic solvents, but for many microelectronic applications the …

The oxidation behavior of Ge (001) and Ge (110) surfaces underneath the chemical vapor
deposition (CVD)-grown graphene films has been investigated experimentally and …

Large surface transfer is a long-standing challenge for applications that require stacking 2D
and 3D materials with only a limited number of combinations and techniques currently found …

The growth of hexagonal boron nitride (hBN) directly onto semiconducting substrates, like
Ge and Ge on Si, promises to advance the integration of hBN into microelectronics …